Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

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SYSNO	0505794
Title	Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
Author(s)	Dominec, Filip (FZU-D)_{RID, ORCID} Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hubáček, Tomáš (FZU-D)_ORCID Zíková, Markéta (FZU-D)_RID Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Kuldová, Karla (FZU-D)_{RID, ORCID} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Corespondence/senior	Hospodková, Alice - Korespondující autor
Source Title	Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. - : Elsevier
Document Type	Článek v odborném periodiku
Grant	690599, XE - EU countries
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
	GA16-15569S GA ČR - Czech Science Foundation (CSF)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	NL
Keywords	low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
URL	https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link	http://hdl.handle.net/11104/0297183

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Number of the records: 1