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Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
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SYSNO 0505794 Title Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Author(s) Dominec, Filip (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAICorespondence/senior Hospodková, Alice - Korespondující autor Source Title Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. - : Elsevier Document Type Článek v odborném periodiku Grant 690599, XE - EU countries LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic GA16-15569S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Language eng Country NL Keywords low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators URL https://doi.org/10.1016/j.jcrysgro.2018.11.025 Permanent Link http://hdl.handle.net/11104/0297183 File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access
Number of the records: 1