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Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties

  1. 1.
    SYSNO0505794
    TitleInfluence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
    Author(s) Dominec, Filip (FZU-D) RID, ORCID
    Hospodková, Alice (FZU-D) RID, ORCID, SAI
    Hubáček, Tomáš (FZU-D) ORCID
    Zíková, Markéta (FZU-D) RID
    Pangrác, Jiří (FZU-D) RID, ORCID, SAI
    Kuldová, Karla (FZU-D) RID, ORCID
    Vetushka, Aliaksi (FZU-D) RID, ORCID
    Hulicius, Eduard (FZU-D) RID, ORCID, SAI
    Corespondence/seniorHospodková, Alice - Korespondující autor
    Source Title Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. - : Elsevier
    Document TypeČlánek v odborném periodiku
    Grant 690599, XE - EU countries
    LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    GA16-15569S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    Languageeng
    CountryNL
    Keywords low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
    URLhttps://doi.org/10.1016/j.jcrysgro.2018.11.025
    Permanent Linkhttp://hdl.handle.net/11104/0297183
    FileDownloadSizeCommentaryVersionAccess
    0505794.pdf51.1 MBAuthor’s postprintopen-access
     
Number of the records: 1  

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