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Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties
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SYSNO ASEP 0505794 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Author(s) Dominec, Filip (FZU-D) RID, ORCID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hubáček, Tomáš (FZU-D) ORCID
Zíková, Markéta (FZU-D) RID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Kuldová, Karla (FZU-D) RID, ORCID
Vetushka, Aliaksi (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAINumber of authors 8 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 507, Feb (2019), s. 246-250Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords low dimensional structures ; V-pits ; metalorganic vapor phase epitaxy ; InGaN/GaN quantum wells ; GaN buffer layer ; scintillators Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA16-15569S GA ČR - Czech Science Foundation (CSF) Method of publishing Limited access Institutional support FZU-D - RVO:68378271 UT WOS 000455667500041 EID SCOPUS 85057497030 DOI 10.1016/j.jcrysgro.2018.11.025 Annotation Although InGaN layers or InGaN/GaN superlattices are commonly used as efficiency improving buffers for LED structure production, there is still a controversy and active discussion about the mechanisms improving the luminescence properties of InGaN QWs grown above such buffers. In this manuscript it is shown that presence of In in the buffer layer is not the primary reason for photoluminescence improvement which can be also achieved by introduction of GaN buffer layer grown at lower temperature under nitrogen atmosphere. SIMS analysis suggests that low temperature buffer layer does not influence the impurity incorporation and hence the PL improvement is caused by suppressed contamination of MQW region grown above the low temperature buffer. AFM images for two samples that differ mostly in morphology however supports another explanation in which formation of larger V-pits is the main reason for the luminescence improvement. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2020 Electronic address https://doi.org/10.1016/j.jcrysgro.2018.11.025
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