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Characterization of Highly Irradiated ALPIDE Silicon Sensors
- 1.0504776 - ÚJF 2020 RIV CH eng J - Journal Article
Raskina, Valentina - Křížek, Filip
Characterization of Highly Irradiated ALPIDE Silicon Sensors.
Universe. Roč. 5, č. 4 (2019), č. článku 91. ISSN 2218-1997. E-ISSN 2218-1997
R&D Projects: GA MŠMT(CZ) LTT17018; GA MŠMT LM2015056
Institutional support: RVO:61389005
Keywords : ALICE ITS upgrade * ALPIDE * MAPS * silicon pixel * radiation hardness * cyclotron
OECD category: Particles and field physics
Impact factor: 1.752, year: 2019
Method of publishing: Open access
https://doi.org/10.3390/universe5040091
The ALICE (A Large Ion Collider Experiment) experiment at CERN will upgrade its Inner Tracking System (ITS) detector. The new ITS will consist of seven coaxial cylindrical layers of ALPIDE silicon sensors which are based on Monolithic Active Pixel Sensor (MAPS) technology. We have studied the radiation hardness of ALPIDE sensors using a 30 MeV proton beam provided by the cyclotron U-120M of the Nuclear Physics Institute of the Czech Academy of Sciences in. Rez. In this paper, these long-term measurements will be described. After being irradiated up to the total ionization dose 2.7 Mrad and non-ionizing energy loss 2.7 x1013 1 MeV n(eq) . cm(-2), ALPIDE sensors fulfill ITS upgrade project technical design requirements in terms of detection efficiency and fake-hit rate.
Permanent Link: http://hdl.handle.net/11104/0296323
File Download Size Commentary Version Access 0504776.pdf 0 1.8 MB Open Access - RoMEO Publisher’s postprint open-access
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