Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

Hubáček, Tomáš; Hospodková, Alice; Kuldová, Karla; Oswald, Jiří; Pangrác, Jiří; Jarý, Vítězslav; Dominec, Filip; Slavická Zíková, Markéta; Hájek, František; Hulicius, Eduard; Vetushka, Aliaksi; Ledoux, G.; Dujardin, C.; Nikl, Martin

doi:https://dx.doi.org/10.1039/C8CE01830H

Number of the records: 1

Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs

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SYSNO ASEP	0502820
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs
Author(s)	Hubáček, Tomáš (FZU-D)_ORCID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Kuldová, Karla (FZU-D)_{RID, ORCID} Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Jarý, Vítězslav (FZU-D)_{RID, ORCID} Dominec, Filip (FZU-D)_{RID, ORCID} Slavická Zíková, Markéta (FZU-D)_ORCID Hájek, František (FZU-D)_ORCID Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Vetushka, Aliaksi (FZU-D)_{RID, ORCID} Ledoux, G. (FR) Dujardin, C. (FR) Nikl, Martin (FZU-D)_{RID, ORCID, SAI}
Number of authors	14
Source Title	CrystEngComm. - : Royal Society of Chemistry - ISSN 1466-8033 Roč. 21, č. 2 (2019), s. 356-362
Number of pages	7 s.
Publication form	Online - E
Language	eng - English
Country	GB - United Kingdom
Keywords	InGaN ; MOVPE ; QW number
Subject RIV	BM - Solid Matter Physics ; Magnetism
OECD category	Condensed matter physics (including formerly solid state physics, supercond.)
R&D Projects	GA16-11769S GA ČR - Czech Science Foundation (CSF)
	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Method of publishing	Open access with time embargo (01.02.2020)
Institutional support	FZU-D - RVO:68378271
UT WOS	000454942600015
EID SCOPUS	85059551673
DOI	https://doi.org/10.1039/C8CE01830H
Annotation	InGaN/GaN multiple quantum well structures are studied as potential candidates for superfast scintillation detectors and show the leading decay time of around 1 ns and intense luminescence. Photoluminescence properties of these structures with quantum well numbers ranging from 10 to 60 are described. It is shown that with increased QW number, the luminescence efficiency of the whole structure increases due to the V-pits of a sufficient size suppressing non-radiative recombination. Suppression of the non-radiative recombination near dislocations is demonstrated by the cathodoluminescence measurement. The optimal V-pit size is found to be in the range from 200 to 300 nm, which is obtained for structures with 40 QWs. On the other hand, when the V-pit size exceeds the optimal value, the PL intensity decreases by strong V-pit coalescence, which is observed for structures with 60 QWs. For further increasing the active region thickness it is necessary to find a way to control the V-pit size.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2019

Number of the records: 1