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Technological possibilities and vacuum systems for deposition of Si:H thin films with embedded nanoparticles
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SYSNO ASEP 0502002 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Technological possibilities and vacuum systems for deposition of Si:H thin films with embedded nanoparticles Author(s) Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Kupčík, Jaroslav (UCHP-M) RID, ORCID, SAI
Remeš, Zdeněk (FZU-D) RID, ORCIDNumber of authors 5 Source Title Book of Abstracts of the 28th Joint Seminar Development of Materials Science in Research and Education. - Praha : Institute of Physics of the Czech Academy of Sciences, 2018 / Kožíšek Z. ; Král R. ; Zemenová P. - ISBN 978-80-905962-8-3
S. 53-53Number of pages 1 s. Publication form Online - E Action Joint Seminar Development of Materials Science in Research and Education /28./ Event date 03.09.2018 - 07.09.2018 VEvent location Pavlov Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords a-Si:H ; PIN diode ; thin films ; nanoparticles Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Subject RIV - cooperation Institute of Chemical Process Fundamentals - Solid Matter Physics ; Magnetism R&D Projects LTC17029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858 Annotation For evaluation of new quality Si:H thin films we already used the samples deposited by two technological procedures, which allows the integration of convenient nanoparticles of different semiconductors into the Si:H structures. The first one is a combination of PECVD and Reactive Deposition Epitaxy (RDE) and second one the PECVD and Reactive Laser Ablation (RLA). In both cases the current technology does not allow to deposit the whole diode structure without interruption of vacuum process. Up to now only in the case of PECVD and Vacuum Evaporation together with Plasma Treatment (VE+PT) the all in situ deposition processes where realized in special vacuum chamber. For the development of effective solar cells the long-time efforts were focused on the group 4 of the periodic table of elements, i.e. C, Si, Ge and their eventual alloys.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
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