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Optimization of a multiphysics problem in semiconductor laser design

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    SYSNO ASEP0501588
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleOptimization of a multiphysics problem in semiconductor laser design
    Author(s) Adam, Lukáš (UTIA-B)
    Hintermüller, M. (DE)
    Peschka, D. (DE)
    Surowiec, T. (DE)
    Number of authors4
    Source TitleSiam Journal on Applied Mathematics. - : SIAM Society for Industrial and Applied Mathematics - ISSN 0036-1399
    Roč. 79, č. 1 (2019), s. 257-283
    Number of pages27 s.
    Publication formPrint - P
    Languageeng - English
    CountryUS - United States
    Keywordsoptoelectronics ; semiconductor laser ; strained germanium microbridges ; van Roosbroeck ; phase field ; design optimization ; topology optimization ; PDE-constrained optimization
    Subject RIVBA - General Mathematics
    OECD categoryPure mathematics
    Method of publishingLimited access
    Institutional supportUTIA-B - RVO:67985556
    UT WOS000460127100012
    EID SCOPUS85063193497
    DOI10.1137/18M1179183
    AnnotationA multimaterial topology optimization framework using phase elds is suggested for the simultaneous optimization of mechanical and optical properties to be used in the development of optoelectronic devices. The technique provides a means of determining the cross section of the material alignments needed to create a sufficiently large strain pro le within an optically active region of a photonic device. Based on the physical aspects of the underlying device, a nonlinear multiphysics model for the elastic and optical properties is proposed in the form of a linear elliptic partial differential equation (elasticity) coupled via the underlying topology to an eigenvalue problem of Helmholtz type (optics). The differential sensitivity of the displacement and eigenfunctions with respect to the changes in the underlying topology is investigated. After proving existence and optimality results, numerical experiments leading to an optimal material distribution for maximizing the strain in a Ge-on-Si microbridge are given. The presence of a net gain at low voltages for the optimal design is demonstrated by solving the steady-state van Roosbroeck (drift-diffusion) system, which proves the viability of the approach for the development of next-generation photonic devices.
    WorkplaceInstitute of Information Theory and Automation
    ContactMarkéta Votavová, votavova@utia.cas.cz, Tel.: 266 052 201.
    Year of Publishing2020
    Electronic addresshttps://epubs.siam.org/doi/abs/10.1137/18M1179183
Number of the records: 1  

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