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Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles
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SYSNO ASEP 0496537 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Characterization of hydrogenated silicon thin films and diode structures with integrated germanium nanoparticles Author(s) Stuchlík, Jiří (FZU-D) RID, ORCID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Kupčík, Jaroslav (UCHP-M) RID, ORCID, SAI
Remeš, Zdeněk (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCIDNumber of authors 5 Source Title Nanocon 2017 : conference proceedings : 9th International Conference on Nanomaterials - Research & Application. - Ostrava : Tanger Ltd., 2018 - ISBN 9788087294819 Pages s. 123-127 Number of pages 5 s. Publication form Online - E Action NANOCON 2017. International Conference on Nanomaterials - Research & Application /9./ Event date 18.10.2017 - 20.10.2017 VEvent location Brno Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords PECVD ; a-Si:H diode structures ; Ge ; nanoparticles Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Subject RIV - cooperation Institute of Chemical Process Fundamentals - Physical ; Theoretical Chemistry R&D Projects LTC17029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858 Annotation Substrates with ZnO (or ITO) conductive layers were covered by thin film of a-Si:H deposited by PECVD technique. Under a turbo-molecular vacuum (10-4 Pa) the reactive laser ablation (RLA) was used to cover this a-Si:H thin film by germanium NPs. The RLA was performed using focused excimer ArF laser beam (193 nm, 100 mJ/pulse) under SiH4 background atmosphere (0.5 Pa). As a target the elemental germanium was used. Reaction between ablated Ge and silane led to formation of Ge NPs covered by thin SiGe layer. Then the deposited NPs were covered and stabilized by a-Si:H layer by PECVD. Those two deposition processes was alternated and applied a few times. The Si:H thin films with integrated Ge NPs were characterized by microscopic, spectroscopic and diffraction techniques. I-V characteristics of final diode structures without and under illumination were measured as well as their electroluminescence behaviour. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2019
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