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Multilevel resistive switching in Cu and Ag doped CBRAM device
- 1.0493358 - ÚMCH 2019 RIV NL eng J - Journal Article
Zhang, B. - Zima, Vítězslav - Mikysek, T. - Podzemná, V. - Rozsíval, P. - Wágner, T.
Multilevel resistive switching in Cu and Ag doped CBRAM device.
Journal of Materials Science-Materials in Electronics. Roč. 29, č. 19 (2018), s. 16836-16841. ISSN 0957-4522. E-ISSN 1573-482X
Institutional support: RVO:61389013
Keywords : resistive switching * memory device * materials for energy
OECD category: Inorganic and nuclear chemistry
Impact factor: 2.195, year: 2018
A new type of memory device, based on Ag and Cu doped Ge2Se3 chalcogenide, was designed and investigated by a new method, referred to as “one pulse SET method”. The device shows multilevel resistance states. A resistance state between ON and OFF states was found with a wide range of bias. The multilevel resistance behavior could be caused by the formation and dissolution of Ag and Cu filaments. The energy-dispersive X-ray spectroscopy mapping and scanning electron microscope results prove the distribution of Cu and Ag elements in the film.
Permanent Link: http://hdl.handle.net/11104/0287314
Number of the records: 1