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Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I
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SYSNO ASEP 0488135 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Computer simulations of X-ray six-beam diffraction in a perfect silicon crystal. I Author(s) Kohn, V.G. (RU)
Khikhlukha, Danila (FZU-D)Number of authors 2 Source Title Acta Crystallographica Section A-Foundation and Advances. - : Oxford Blackwell - ISSN 2053-2733
Roč. 72, May (2016), s. 349-356Number of pages 8 s. Language eng - English Country GB - United Kingdom Keywords X-ray diffraction ; silicon crystal ; six-beam diffraction ; section topography ; computer simulations Subject RIV BL - Plasma and Gas Discharge Physics OECD category Fluids and plasma physics (including surface physics) R&D Projects EF15_008/0000162 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) ED1.1.00/02.0061 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000375147400009 EID SCOPUS 84965057155 DOI 10.1107/S2053273316001959 Annotation This paper reports computer simulations of the transmitted-beam intensity distribution for the case of six-beam (000, 220, 242, 044,224,202) diffraction of X-rays in a perfect silicon crystal of thickness 1 mm. Both the plane-wave angular dependence and the six-beam section topographs, which are usually obtained in experiments with a restricted beam (two-dimensional slit), are calculated. The angular dependence is calculated in accordance with Ewald's theory. The section topographs are calculated from the angular dependence by means of the fast Fourier transformation procedure. This approach allows one to consider, for the first time, the transformation of the topograph's structure due to the two-dimensional slit sizes and the distance between the slit and the detector. The results are in good agreement with the results of other works and with the experimental data. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
Number of the records: 1