- Static negative capacitance of a ferroelectric nano-domain nucleus.
Number of the records: 1  

Static negative capacitance of a ferroelectric nano-domain nucleus.

  1. 1.
    SYSNO ASEP0484772
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleStatic negative capacitance of a ferroelectric nano-domain nucleus.
    Author(s) Sluka, T. (CH)
    Mokrý, Pavel (UFP-V) RID
    Setter, N. (CH)
    Article number152902
    Source TitleApplied Physics Letters. - : AIP Publishing - ISSN 0003-6951
    Roč. 111, č. 15 (2017)
    Number of pages5 s.
    Publication formPrint - P
    Languageeng - English
    CountryUS - United States
    KeywordsFerroelectric materials ; Capacitors ; Bipolar transistors ; Electrodes ; Dielectrics
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA14-32228S GA ČR - Czech Science Foundation (CSF)
    Institutional supportUFP-V - RVO:61389021
    UT WOS000413196100027
    EID SCOPUS85031287248
    DOI https://doi.org/10.1063/1.4989391
    AnnotationMiniaturization of conventional field effect transistors (FETs) approaches the fundamental limits beyond which opening and closing the transistor channel require higher gate voltage swing and cause higher power dissipation and heating. This problem could be eliminated by placing a ferroelectric layer between the FET gate electrode and the channel, which effectively amplifies the gate voltage. The original idea of using a bulk ferroelectric negative capacitor suffers however from irreversible multi-domain ferroelectric switching, which does not allow us to stabilize static negative capacitance, while a recent reversible solution with super-lattices may be difficult to integrate onto FET. Here, we introduce a solution which provides static negative capacitance from a nano-domain nucleus. Phase-field simulations confirm the robustness of this concept, the conveniently achievable small effective negative capacitance and the potentially high compatibility of such a negative nano-capacitor with FET technology.
    WorkplaceInstitute of Plasma Physics
    ContactVladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975
    Year of Publishing2018
Number of the records: 1  

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