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Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response.
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SYSNO ASEP 0479363 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response. Author(s) Mokrý, Pavel (UFP-V) RID
Sluka, T. (CH)Article number 162906 Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 110, č. 16 (2017)Number of pages 4 s. Publication form Print - P Language eng - English Country US - United States Keywords microscopic domain wall ; electric fields ; temperature dependence Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering OECD category Electrical and electronic engineering R&D Projects GA14-32228S GA ČR - Czech Science Foundation (CSF) Institutional support UFP-V - RVO:61389021 UT WOS 000399984200045 EID SCOPUS 85018500581 DOI 10.1063/1.4981874 Annotation It is known that the permittivity of ferroelectric polydomain films and single crystals in weak electric fields is strongly enhanced by the reversible movement of pinned domain walls. Two mechanisms of the movement exist: first, the bending of free segments of the domain wall and second the planar movement of the domain wall as a whole. In this work, we theoretically demonstrate that it is possible to determine the dominant mechanism of the reversible domain wall movement by means of a temperature measurement of a nonlinear macroscopic dielectric response. In addition, we demonstrate that using this approach, it is possible to obtain quantitative information on the microscopic distribution of the pinning centers. Thus, we suggest that this concept may serve as a simple and useful characterisation tool in the process of development of high-permittivity materials. Workplace Institute of Plasma Physics Contact Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Year of Publishing 2018
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