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Origin of Bi.sup.3+./sup.–related luminescence in Gd.sub.3./sub.Ga.sub.5./sub.O.sub.12./sub.:Bi epitaxial films

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    SYSNO ASEP0476233
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleOrigin of Bi3+–related luminescence in Gd3Ga5O12:Bi epitaxial films
    Author(s) Krasnikov, A. (EE)
    Luchechko, A. (UA)
    Mihóková, Eva (FZU-D) RID, ORCID, SAI
    Nikl, Martin (FZU-D) RID, ORCID, SAI
    Syvorotka, I. I. (UA)
    Zazubovich, S. (EE)
    Zhydachevskii, Ya. (PL)
    Number of authors7
    Source TitleJournal of Luminescence. - : Elsevier - ISSN 0022-2313
    Roč. 190, Oct (2017), s. 81-88
    Number of pages3 s.
    Languageeng - English
    CountryNL - Netherlands
    Keywordsphotoluminescence ; epitaxial films ; gadolinium gallium garnet ; Bi3+ ; energy transfer
    Subject RIVBM - Solid Matter Physics ; Magnetism
    OECD categoryCondensed matter physics (including formerly solid state physics, supercond.)
    R&D ProjectsGA16-15569S GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000405537100014
    EID SCOPUS85019861751
    DOI10.1016/j.jlumin.2017.05.050
    AnnotationPhotoluminescence characteristics of Gd3Ga5O12:Bi single crystalline films with different Bi contents grown by the liquid phase epitaxy are studied by the steady-state and time-resolved luminescence spectroscopy methods in the 4.2–500 K temperature range under excitation within the 3.8–6.0 eV. No ultraviolet emission, which could be ascribed to the radiative decay of the triplet excited state of Bi3+, is observed. Only visible emission is shown to arise from the Bi3+–related luminescence centers. Both the intense 2.54 eV emission and the weaker 2.46 eV emission of Gd3Ga5O12:Bi are shown to be of exciton origin. The characteristic parameters of the corresponding exciton states are determined. The photostimulated processes, resulting in the localized excitons formation under excitation in the Bi3+–related absorption bands, are discussed.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2018
Number of the records: 1  

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