Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

0475057 - FZÚ 2018 RIV GB eng J - Journal Article
Olejník, Kamil - Schuler, V. - Martí, Xavier - Novák, Vít - Kašpar, Zdeněk - Wadley, P. - Campion, R. P. - Edmonds, K. W. - Gallagher, B. L. - Garces, J. - Baumgartner, M. - Gambardella, P. - Jungwirth, Tomáš
Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility.
Nature Communications. Roč. 8, May (2017), 1-7, č. článku 15434. E-ISSN 2041-1723
R&D Projects: GA MŠMT LM2015087; GA ČR GB14-37427G
EU Projects: European Commission(XE) 268066 - 0MSPIN
Institutional support: RVO:68378271
Keywords : spintronics * antiferromagnets
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 12.353, year: 2017

Here we place the emerging field of antiferromagnetic spintronics on the map of non-volatile solid state memory technologies. We demonstrate the complete write/store/read functionality in an antiferromagnetic CuMnAs bit cell embedded in a standard printed circuit board communicating with a computer via a USB interface. We show that the elementary-shape bit cells fabricated from a single-layer AF are electrically written on timescales ranging from milliseconds to nanoseconds and we demonstrate their deterministic multi-level switching.
Permanent Link: http://hdl.handle.net/11104/0271943