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Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs
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SYSNO ASEP 0474904 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Enhanced extraction of silicon-vacancy centers light emission using bottom-up engineered polycrystalline diamond photonic crystal slabs Author(s) Ondič, Lukáš (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Hruška, Karel (FZU-D) RID, ORCID
Fait, J. (TD)
Kapusta, Peter (UFCH-W) RID, ORCIDNumber of authors 5 Source Title ACS Nano. - : American Chemical Society - ISSN 1936-0851
Roč. 11, č. 3 (2017), s. 2972-2981Number of pages 10 s. Language eng - English Country US - United States Keywords photonic crystal ; diamond ; silicon vacancy center Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) Subject RIV - cooperation J. Heyrovsky Institute of Physical Chemistry - Physical ; Theoretical Chemistry R&D Projects GJ16-09692Y GA ČR - Czech Science Foundation (CSF) LD15003 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GBP208/12/G016 GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 ; UFCH-W - RVO:61388955 UT WOS 000398014900063 EID SCOPUS 85016420852 DOI 10.1021/acsnano.6b08412 Annotation Silicon vacancy (SiV) centers are optically active defects in diamond. The SiV centers, in contrast to nitrogen vacancy (NV) centers, possess narrow and efficient luminescence spectrum (centered at approximate to 738 nm) even at room temperature, which can be utilized for quantum photonics and sensing applications. However, most of light generated in diamond is trapped in the material due to the phenomenon of total internal reflection. In order to overcome this issue, we have prepared two-dimensional photonic crystal slabs from polycrystalline diamond thin layers with high density of SiV centers employing bottom up growth on quartz templates. We have shown that the spectral overlap between the narrow light emission of the SiV centers and the leaky modes extracting the emission into almost vertical direction (where it can be easily detected) can be obtained by controlling the deposition time. More than 14-fold extraction enhancement of the SiV centers photoluminescence was achieved compared to an uncorrugated sample. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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