Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications

Number of the records: 1

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SYSNO	0474047
Title	Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
Author(s)	Zíková, Markéta (FZU-D)_RID Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. - : Elsevier
Document Type	Článek v odborném periodiku
Grant	LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	NL
Keywords	MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
Permanent Link	http://hdl.handle.net/11104/0271146

Number of the records: 1