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Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications
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SYSNO ASEP 0474047 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications Author(s) Zíková, Markéta (FZU-D) RID
Hospodková, Alice (FZU-D) RID, ORCID, SAI
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAINumber of authors 5 Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 464, Apr (2017), s. 59-63Number of pages 5 s. Language eng - English Country NL - Netherlands Keywords MOVPE ; quantum dot ; strain reducing layer ; InAs ; GaAsSb ; InGaAs Subject RIV BM - Solid Matter Physics ; Magnetism OECD category Condensed matter physics (including formerly solid state physics, supercond.) R&D Projects LO1603 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000398873500011 EID SCOPUS 85015385142 DOI 10.1016/j.jcrysgro.2016.11.110 Annotation InAs/GaAs QD HS with different covering layers (CLs) prepared by MOVPE are compared. The recombination energy of a structure covered only by GaAs depends nonlinearly on CL thickness. Experimental data of PL were supported by theoretical simulations. These simulations prove that the strain plays a major role. Due to the strain reduction, the recombination energy is decreased, so the structure has longer PL wavelength. By theoretical simulations it was shown that for high content of In in InGaAs covering layer (45% and more), the heterostructure is type II, which would normally be unreachable for flat layers. For the structure with GaAsSb SRL, the band alignment is highly dependent on the SRL composition. The type I/type II transition occurs for approximately 15% of Sb, this value also slightly depends on the QD size. All structures were also studied by HRTEM to show different behavior of the CLs on the interface with InAs which highly influences the structure quality. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2018
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