0469471 - FZÚ 2017 RIV DE eng J - Journal Article
Pikna, Peter - Müller, Martin - Becker, C. - Fejfar, Antonín
Passivation effect of water vapour on thin film polycrystalline Si solar cells.
Physica Status Solidi A. Roč. 213, č. 7 (2016), s. 1969-1975. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA MŠMT LM2015087; GA ČR GA13-12386S
Grant - others:AV ČR(CZ) DAAD-16-27
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : passivation, * plasma hydrogenation * silicon * solar cells * thin films * water vapour
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.775, year: 2016 ; AIS: 0.414, rok: 2016
DOI: https://doi.org/10.1002/pssa.201533006

We investigated a passivation of both surface and bulk of polycrystalline silicon films by water vapour by Suns-VOC method to measure the open-circuit voltage. A sufficiently high temperature (350–450 °C) is necessary for a successful silicon passivation. Different gases were tested beside water vapour (H2, H2 + H2O, O2 + H2O, air) but none of them resulted in higher VOC than pure steam (360 mV from starting 220 mV). Results from Fourier transform infrared spectroscopy indicate that water vapour passivation is rather oxidation while hydrogen plays a significant supporting role in the process. Water vapour is able to passivate defects in the whole silicon volume, but its passivation effect is not strong enough to become an adequate alternative to the plasma hydrogenation with the best result of VOC ∼497 mV. On the other hand, it provides advantage of simplicity (no vacuum system and deionised water steam as the only input).
Permanent Link: http://hdl.handle.net/11104/0267259