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Losses in TiO2/SiO2 Multilayer Coatings

  1. 1.
    0469360 - ÚFP 2017 RIV US eng C - Conference Paper (international conference)
    Budasz, Jiří - Huťka, Jan - Václavík, Jan
    Losses in TiO2/SiO2 Multilayer Coatings.
    Proceedings of SPIE 10151, Optics and Measurement International Conference 2016. Vol. 10151. Bellingham: SPIE, Society of Photo-Optical Instrumentation Engineers, 2016 - (Kovačičinová, J.), č. článku 101510R. SPIE. ISBN 978-1-5106-0753-8. ISSN 0277-786X.
    [OAM 2016, Optics and Measurement International Conference 2016. Liberec (CZ), 11.10.2016-14.10.2016]
    R&D Projects: GA MŠMT(CZ) LO1206
    Institutional support: RVO:61389021
    Keywords : thin films * ion beam assisted deposition (IBAD) * IBAD * silicone dioxide * titanium dioxide * losses
    Subject RIV: JJ - Other Materials
    Result website:
    http://dx.doi.org/10.1117/12.2257232
    DOI: https://doi.org/10.1117/12.2257232

    This paper deals with optical losses in the coatings consisting of a combination of titanium dioxide (TiO2) and silicon dioxide (SiO2) layers evaporated by the ion beam assisted deposition (IBAD). This combination is commonly used for optical coatings as a standard choice for antireflective or any other optical filter in the visible and near IR range. Although the technology has been known for decades, we point out that some undescribed parasite losses can still appear and we show how to deal with them. In fact, in some cases, the losses made the target coating even inapplicable. In this paper we try to investigate the origin of the losses and we describe the deposition parameters which allow us to reduce or completely remove them. We determined whether the losses are proportional to the total thickness of the coating or to the number of layers. The influence of scattering was measured as well. Deposition parameters which were studied are the substrate temperature, discharge voltage of the assisting ion gun, oxygen flow of the assisting ion gun and the deposition rate, especially its starting curve. Influence of the post process annealing was studied as well. Starting curve of the deposition rate of SiO2 layer and the amount of oxygen flowing through the assisting ion gun were found as a crucial parameters.

    Permanent Link: http://hdl.handle.net/11104/0267157

     
     
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