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Profilometry of thin films on rough substrates by Raman spectroscopy
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SYSNO ASEP 0469174 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Profilometry of thin films on rough substrates by Raman spectroscopy Author(s) Ledinský, Martin (FZU-D) RID, ORCID, SAI
Paviet-Salomon, B. (CH)
Vetushka, Aliaksi (FZU-D) RID, ORCID
Geissbühler, J. (CH)
Tomasi, A. (CH)
Despeisse, M. (CH)
De Wolf, S. (SA)
Ballif, C. (CH)
Fejfar, Antonín (FZU-D) RID, ORCID, SAIArticle number 37859 Source Title Scientific Reports. - : Nature Publishing Group - ISSN 2045-2322
Roč. 6, Dec (2016), s. 1-7Number of pages 7 s. Language eng - English Country GB - United Kingdom Keywords solar cells ; surfaces ; interfaces and thin films ; two-dimensional materials Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LM2015087 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA14-15357S GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 UT WOS 000389373900001 EID SCOPUS 85003454609 DOI 10.1038/srep37859 Annotation Thin, light-absorbing films attenuate the Raman signal of underlying substrates. In this article, we exploit this phenomenon to develop a contactless thickness profiling method for thin films deposited on rough substrates. We demonstrate this technique by probing profiles of thin amorphous silicon stripes deposited on rough crystalline silicon surfaces, which is a structure exploited in high-efficiency silicon heterojunction solar cells. Our spatially-resolved Raman measurements enable the thickness mapping of amorphous silicon over the active area of solar cells with very high precision; the thickness detection limit is well below 1 nm and the spatial resolution is down to 500 nm, limited only by the optical resolution. We also discuss the wider applicability of this technique for the characterization of thin layers prepared on Raman/photoluminescence-active substrates, as well as its use for single-layer counting in multilayer 2D materials such as graphene, MoS2 and WS2. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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