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Transient changes of optical properties in semiconductors in response to femtosecond laser pulses
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SYSNO ASEP 0468766 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Transient changes of optical properties in semiconductors in response to femtosecond laser pulses Author(s) Tkachenko, V. (DE)
Medvedev, Nikita (FZU-D) ORCID, RID
Ziaja, B. (DE)Number of authors 3 Article number 238 Source Title Applied Sciences-Basel. - : MDPI
Roč. 6, č. 9 (2016), 1-12Number of pages 12 s. Language eng - English Country CH - Switzerland Keywords free-electron lasers ; transient optical properties Subject RIV BM - Solid Matter Physics ; Magnetism Institutional support FZU-D - RVO:68378271 UT WOS 000385518000006 EID SCOPUS 84991112220 DOI 10.3390/app6090238 Annotation We present an overview of our theoretical simulations on the interaction of ultrafast laser pulses with matter. Our dedicated simulation tool, X-ray induced Thermal And Non-thermal Transitions (XTANT) can currently treat semiconductors irradiated with soft to hard X-ray fs pulses. During the excitation and relaxation of solids, their optical properties such as reflectivity, transmission and absorption, are changing, affected by transient electron excitation and, at sufficiently high dose, by atomic relocations. We report how the transient optical properties can be used for diagnostics of electronic and structural transitions occurring in irradiated semiconductors. The presented methodology for calculation of the complex dielectric function applied in XTANT proves to be capable of describing changes in the optical parameters, when the solids are driven out of equilibrium by intense laser pulses. Comparison of model predictions with the existing experimental data shows a good agreement. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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