Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

Krivyakin, G.K.; Volodin, V.; Kochubei, S.A.; Kamaev, G.N.; Purkrt, Adam; Remeš, Zdeněk; Fajgar, Radek; Stuchlíková, The-Ha; Stuchlík, Jiří

doi:https://dx.doi.org/10.1134/S1063782616070101

Number of the records: 1

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

1.

SYSNO ASEP	0467514
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing
Author(s)	Krivyakin, G.K. (RU) Volodin, V. (RU) Kochubei, S.A. (RU) Kamaev, G.N. (RU) Purkrt, Adam (FZU-D)_RID Remeš, Zdeněk (FZU-D)_{RID, ORCID} Fajgar, Radek (UCHP-M)_{RID, ORCID, SAI} Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Stuchlík, Jiří (FZU-D)_{RID, ORCID}
Source Title	Semiconductors - ISSN 1063-7826 Roč. 50, č. 7 (2016), s. 935-940
Number of pages	6 s.
Language	eng - English
Country	RU - Russian Federation
Keywords	hydrogenated amorphous silicon ; nanocrystals ; laser annealing
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	LH12236 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858
UT WOS	000379173600016
EID SCOPUS	84978166207
DOI	https://doi.org/10.1134/S1063782616070101
Annotation	Si nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 to 250 mJ/cm2 (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR) range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2017

Number of the records: 1