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Multicomponent garnet film scintillators for SEM electron detectors

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    SYSNO ASEP0465105
    Document TypeC - Proceedings Paper (int. conf.)
    R&D Document TypeConference Paper
    TitleMulticomponent garnet film scintillators for SEM electron detectors
    Author(s) Schauer, Petr (UPT-D) RID, SAI, ORCID
    Lalinský, Ondřej (UPT-D) RID, ORCID, SAI
    Lučeničová, Z. (CZ)
    Kučera, M. (CZ)
    Number of authors4
    Source TitleEMC2016. The 16th European Microscopy Congress. Proceedings. - Oxford : Wiley, 2016 - ISBN 9783527808465
    Pagess. 374-375
    Number of pages2 s.
    Publication formOnline - E
    ActionEMC2016. European Microscopy Congress /16./
    Event date28.08.2016 - 02.09.2016
    VEvent locationLyon
    CountryFR - France
    Event typeWRD
    Languageeng - English
    CountryGB - United Kingdom
    Keywordselectron detector ; epitaxial film ; GAGG:Ce ; multicomponent garnet ; scintillator ; SEM
    Subject RIVJA - Electronics ; Optoelectronics, Electrical Engineering
    R&D ProjectsGA16-05631S GA ČR - Czech Science Foundation (CSF)
    TE01020118 GA TA ČR - Technology Agency of the Czech Republic (TA ČR)
    LO1212 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    ED0017/01/01 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportUPT-D - RVO:68081731
    DOI https://doi.org/10.1002/9783527808465.EMC2016.5236
    AnnotationWith an Everhart-Thornley (ET) scintillation detector in SEM, an image is formed by signal electrons emerged after an interaction of focused scanning electron beam with the specimen surface. In such a case a scintillator plays an important role as a fast electron-photon signal conversion element. A selection of fast scintillation materials is very limited, because the only mechanism for scintillators applicable in SEM ET detectors consists in allowed 5d-4f transitions in lanthanide ions. Unfortunately, the widely used Czochralski grown single crystal YAG:Ce scintillators suffer from an afterglow, which deteriorate the ability to transfer high image contrast. The mentioned afterglow in the bulk single crystal is caused by inevitable structural defects, such as antisite defects. These trap states are responsible not only for delayed radiative recombination causing the afterglow, but also for a degradation of the light yield. The aim of this study is to introduce new multicomponent garnet film scintillators for SEM electron detectors that due to the substitution of Al by Ga in the Gd3Al5O12:Ce garnet extensively supress the shallow traps resulting in a significant increase of the cathodoluminescence (CL) efficiency and in improvement of the afterglow characteristics.
    WorkplaceInstitute of Scientific Instruments
    ContactMartina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
    Year of Publishing2017
Number of the records: 1  

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