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Growth of graphene from C/Co/SiO.sub.2./sub./Si structure
- 1.0463609 - FZÚ 2017 RIV NL eng C - Conference Paper (international conference)
Macháč, P. - Bláhová, V. - Cichoň, Stanislav
Growth of graphene from C/Co/SiO2/Si structure.
Materials Today: Proceedings. Vol. 3S. Amsterdam: Elsevier Ltd., 2016, S203-S208. ISSN 2214-7853.
[International Conference on Diamond and Carbon Materials (DCM) /25./. Madrid (ES), 07.09.2014-11.09.2014]
R&D Projects: GA MZd(CZ) NV15-33018A
Institutional support: RVO:68378271
Keywords : cobal * graphen * Raman spectroscopy * transfer-free method
Subject RIV: BM - Solid Matter Physics ; Magnetism
This paper deals with preparation of graphene using so-called transfer-free method. Graphene layers have been prepared from the structures C/Co/SiO2/Si together with several modifications. The said method has been used to prepare bi-layer graphene, which can be for example used for construction of unipolar transistors.
Permanent Link: http://hdl.handle.net/11104/0262760
Number of the records: 1