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Nanoparticles embedded in hydrogenated amorphous silicon thin layers
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SYSNO ASEP 0452934 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Nanoparticles embedded in hydrogenated amorphous silicon thin layers Author(s) Remeš, Zdeněk (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Purkrt, Adam (FZU-D) RID
Fajgar, Radek (UCHP-M) RID, ORCID, SAI
Dřínek, Vladislav (UCHP-M) RID, ORCID, SAI
Zhuravlev, K. (RU)
Galkin, N.G. (RU)Source Title International Conference on Amorphous and Nanocrystalline Semiconductors /26./ (ICANS26). Abstracts and Program. - Aachen : ICANS26, 2015 / Carius R.
S. 196-197Number of pages 2 s. Publication form Print - P Action International Conference on Amorphous and Nanocrystalline Semiconductors /26./ (ICANS26) Event date 13.09.2015-18.09.2015 VEvent location Aachen Country DE - Germany Event type EUR Language eng - English Country DE - Germany Keywords a-Si:H ; LED ; RLA ; RDE Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA14-05053S GA ČR - Czech Science Foundation (CSF) LD14011 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) LH12236 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 ; UCHP-M - RVO:67985858 Annotation Nanoparticles (NPs) embedded in the hydrogenated amorphous silicon (a-Si:H) thin layer modify its optoelectronic properties making this new nanocomposite material suitable for low cost, large area applications such as light emitting diodes (LED). The a-Si:H layer was grown on glass substrates at 250°C at the Institute of Physics in Prague by the radio frequency plasma enhanced chemical vapor deposition (CVD). The deposition of PbS and CdS nanoparticles on a-Si:H surface was achieved ex-situ at the Rzhanov Institute of Semiconductor Physics in Novosibirsk using Langmuir-Blodgett technique. The Reactive Deposition Epitaxy (RDE) in the ultra high vacuum (UHV) chamber was used ex-situ at Institute of Automation and Control Processes in Vladivostok to deposit metal (Mg, Ca, Cr) silicide nanoparticles. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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