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Interaction of Extreme Ultraviolet Laser Radiation with Solid Surface: Ablation, Desorption, Nanostructuring
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SYSNO ASEP 0445337 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Interaction of Extreme Ultraviolet Laser Radiation with Solid Surface: Ablation, Desorption, Nanostructuring Author(s) Koláček, Karel (UFP-V) RID
Schmidt, Jiří (UFP-V) RID
Štraus, Jaroslav (UFP-V) RID
Frolov, Oleksandr (UFP-V) RID
Juha, Libor (FZU-D) RID, ORCID, SAI
Chalupský, Jaromír (FZU-D) RID, ORCIDSource Title Proceeding of SPIE Vol. 9255: 20th International Symposium on High Power Systems and Applications 2014, HPLS and A 2014, 9255. - Bellingham : SPIE-INT SOC OPTICAL ENGINEERING, 2015 / Tang C. ; Chen S. ; Tang X. - ISSN 0277-786X - ISBN 978-1-62841-322-9 Pages 92553u-92553u Number of pages 9 s. Publication form Medium - C Action International Symposium on High Power Laser Systems and Applications 2014/20./ Event date 25.08.2014-29.08.2014 VEvent location Chengdu Country CN - China Event type WRD Language eng - English Country US - United States Keywords interaction of XUV radiation with solid surface ; desorption ; ablation ; nanostructuring ; nanopatterning ; ablation plume ; ablation jet Subject RIV BH - Optics, Masers, Lasers Subject RIV - cooperation Institute of Physics - Optics, Masers, Lasers R&D Projects GA14-29772S GA ČR - Czech Science Foundation (CSF) Institutional support UFP-V - RVO:61389021 ; FZU-D - RVO:68378271 UT WOS 000350338500136 EID SCOPUS 84923972513 DOI https://doi.org/10.1117/12.2071273 Annotation It was confirmed that nanostructuring can be realised only in the desorption area.In this area the efficiency of particle-removal from a thin surface layer (of the thickness of laser penetration depth) is very small(<10%) for short (femtosecond) laser pulses and for long (nanosecond) pulses and difficult removable material (like GaAs, Si, …).In this case the profile of pattern imprinted by one shot is shallow (units of nanometers only. However,for long (nanosecond) pulses and easily removable material (like PMMA)this changes from 0% at the beam periphery up to ~90% at the ablation contour and, therefore,the profile of imprinted pattern can be relatively deep(up to 200-300 nm by one shot).A suggested interpretation explains this fact in terms of gradual release of target material during laser pulse, which is accompanied by gradually increased laser penetration depth.However, simultaneously laser attenuation in ablated plum should be considered.The detail dynamics of this process is Workplace Institute of Plasma Physics Contact Vladimíra Kebza, kebza@ipp.cas.cz, Tel.: 266 052 975 Year of Publishing 2016
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