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Growth of adlayers studied by fluorination of isotopically engineered graphene
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SYSNO ASEP 0438494 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Growth of adlayers studied by fluorination of isotopically engineered graphene Author(s) Ek Weis, Johan (UFCH-W) RID
da Costa, Sara (UFCH-W) RID
Frank, Otakar (UFCH-W) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCIDSource Title Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 251, č. 12 (2014), s. 2505-2508Number of pages 4 s. Language eng - English Country DE - Germany Keywords chemical vapor deposition ; graphene ; isotope labeling Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects LH13022 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UFCH-W - RVO:61388955 UT WOS 000345830900029 EID SCOPUS 84906651656 DOI 10.1002/pssb.201451169 Annotation Chemical vapor deposition on copper is currently one of the most prospective preparation techniques of large area graphene films. There are still many undisclosed questions regarding the growth process and its conditions. The adlayer formation belongs to those, not only because of the need of uniform monolayers, but also due to the increasing demand for high-coverage bilayers. The combination of Raman spectroscopy, isotopic labeling and functionalization using fluorine can provide the necessary insight into the CVD growth process. The disorder degree caused by the fluorination is unambiguously distinguished by Raman mapping and evaluation of more than 1000 spectra for the individual layers, suggesting the shielding of the C-13 adlayer underneath the continuous C-12 top layer. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2015
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