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Study of polarization phenomena in n-type CdZnTe
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SYSNO ASEP 0437799 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Study of polarization phenomena in n-type CdZnTe Author(s) Elhadidy, Hassan (UFM-A) RID
Dědic, V. (CZ)
Franc, J. (CZ)
Grill, R. (CZ)Number of authors 4 Source Title Journal of Physics D-Applied Physics. - : Institute of Physics Publishing - ISSN 0022-3727
Roč. 47, č. 5 (2014), Art. number 055104Number of pages 5 s. Language eng - English Country GB - United Kingdom Keywords n-type CZT ; polarization ; electron de-trapping ; Pockels effect Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects ED1.1.00/02.0068 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) EE2.3.20.0214 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support UFM-A - RVO:68081723 UT WOS 000329720200007 EID SCOPUS 84892409618 DOI https://doi.org/10.1088/0022-3727/47/5/055104 Annotation We present a study of the polarization phenomena in n-type cadmium zinc telluride material with gold contacts that showed upwards bending of the bands near the metal-semiconductor (M-S) interface. The dynamic of electric field distribution along the sample due to the accumulation of positive space charge below the cathode at the M-S interface was studied by means of the Pockels effect. The analysis of the time, bias and temperature variation of the electric field values at the M-S interface has provided the parameters of the deep donor responsible for the polarization mechanisms in the n-type CdZnTe Workplace Institute of Physics of Materials Contact Yvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485 Year of Publishing 2015
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