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Lattice-mismatched epitaxial growth on porous III-V substrates
- 1.0437411 - ÚFE 2015 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Dimitrakopulos, G.P. - Bazioti, C. - Komninou, Ph.
Lattice-mismatched epitaxial growth on porous III-V substrates.
ECS Transactions. Vol. 58. Pennington: Electrochemical Society, 2013, s. 53-60. ISSN 1938-5862.
[224th ECS Meeting. San Francisco (US), 27.10.2013-28.10.2013]
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gallium alloys * Metallorganic vapor phase epitaxy
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with lattice mismatched In(x)Ga(1-x)As layers
Permanent Link: http://hdl.handle.net/11104/0241026
Number of the records: 1