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Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy

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    SYSNO ASEP0437084
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleRapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy
    Author(s) Fang, W. (US)
    Hsu, A. L. (US)
    Caudillo, R. (US)
    Song, Y. (US)
    Birdwell, A. G. (US)
    Zakar, E. (US)
    Kalbáč, Martin (UFCH-W) RID, ORCID
    Dubey, M. (US)
    Palacios, T. (US)
    Dresselhaus, M. S. (US)
    Araujo, P. T. (US)
    Kong, J. (US)
    Source TitleNano Letters. - : American Chemical Society - ISSN 1530-6984
    Roč. 13, č. 4 (2013), s. 1541-1548
    Number of pages8 s.
    Languageeng - English
    CountryUS - United States
    KeywordsAB-stacked bilayer graphene ; carbon isotope ; fluorination
    Subject RIVCF - Physical ; Theoretical Chemistry
    R&D ProjectsGAP208/12/1062 GA ČR - Czech Science Foundation (CSF)
    LH13022 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportUFCH-W - RVO:61388955
    UT WOS000317549300029
    EID SCOPUS84876034479
    DOI10.1021/nl304706j
    AnnotationThe growth of large-area bilayer graphene has been of technological importance for graphene electronics. The successful application of graphene bilayers critically relies on the precise control of the stacking orientation, which determines both electronic and vibrational properties of the bilayer system. Toward this goal, an effective characterization method is critically needed to allow researchers to easily distinguish the bilayer stacking orientation (i.e., AB stacked or turbostratic). In this work, we developed such a method to provide facile identification of the stacking orientation by isotope labeling. Raman spectroscopy of these isotopically labeled bilayer samples shows a clear signature associated with AB stacking between layers, enabling rapid differentiation between turbostratic and AB-stacked bilayer regions. Using this method, we were able to characterize the stacking orientation in bilayer graphene grown through Low Pressure Chemical Vapor Deposition (LPCVD) with enclosed Cu foils, achieving almost 70% AB-stacked bilayer graphene. Furthermore, by combining surface sensitive fluorination with such hybrid C-12/C-13 bilayer samples, we are able to identify that the second layer grows underneath the first-grown layer, which is similar to a recently reported observation.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2015
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