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Experimental and simulation study of stress in diamond grown on silicon
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SYSNO ASEP 0424591 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Experimental and simulation study of stress in diamond grown on silicon Author(s) Jirásek, Vít (FZU-D) RID
Varga, Marián (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Ižák, Tibor (FZU-D) RID
Babchenko, Oleg (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAISource Title 4 IC4N (International conference nanoparticles and nanomaterials to nanodevices and nanosystems /4./) Book of Abstracs. - Arlington : University of Texas, 2013 / Meletis E.I. ; Kanellopoulos N. ; Politis C. ; Schommers W.
S. 74-74Number of pages 1 s. Action IC4N 2013 International conference from nanoparticles and nanomaterials to nanodevices and nanosystems /4./ Event date 16.06.2013-20.06.2013 VEvent location Corfu Country GR - Greece Event type WRD Language eng - English Country US - United States Keywords diamond films ; Raman spectroscopy ; stress ; FEM simulations Subject RIV JL - Materials Fatigue, Friction Mechanics R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) LH12186 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation In this contribution is studied the stress formed in thin nanocrystalline diamond films deposited on the silicon substrate. The stress is experimentally determined from the Raman shifts of diamond peak, while the theoretical thermal bi-axial stress component is calculated by finite-elements (FEM) method. The stress dependence on the planar geometry is investigated for three configurations: continuous diamond films grown on Si (10 x 10 mm2), b) 100 μm wide diamond strips and c) 200 μm wide diamond strips. Diamond thin films were grown by the standard microwave plasma CVD process. The stripes were prepared either by the selective area deposition (SAD) or by the post-growth etching technique (PGE), respectively. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2014
Number of the records: 1