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Light trapping in thin film silicon solar cells by Raman spectroscopy
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SYSNO ASEP 0424580 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title Light trapping in thin film silicon solar cells by Raman spectroscopy Author(s) Ganzerová, Kristína (FZU-D) RID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title 2nd International Education Forum on Enviroment and Energy Science - Abstracts. - Tokyo : ACEEES, Tokyo Institute of Technology, 2013
S. 1-2Number of pages 2 s. Action International Education Forum on Enviroment and Energy Science /2./ Event date 13.12.2013-17.12.2013 VEvent location Los Angeles Country US - United States Event type WRD Language eng - English Country JP - Japan Keywords Raman spectroscopy ; thin film Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects FR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation In article [3] was shown that the absolute intensity of Raman spectra excited by 785 nm laser is strongly affected by scattering in the rough substrate surface. This effect is caused by rough substrate, where photons are scattered under wide angles, then reflected in layer, resulting in extended path in absorbing material, see Figure 1. Mean photon path length in sample can be even several times increased by light trapping in the layer. As the probability of Raman interaction is directly proportional to the mean photon paths in the layer, this path extension is directly proportional to Raman intensity. Therefore, Raman spectroscopy measured at 785 nm excitation wavelength may be used to determine light trapping in µc-Si layer. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2014
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