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Perspectives and challenges in "Diamond-on-GaN" technology
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SYSNO ASEP 0424372 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Perspectives and challenges in "Diamond-on-GaN" technology Author(s) Ižák, Tibor (FZU-D) RID
Jirásek, Vít (FZU-D) RID
Vanko, G. (SK)
Babchenko, Oleg (FZU-D) RID, ORCID
Varga, Marián (FZU-D) RID, ORCID
Kromka, Alexander (FZU-D) RID, ORCID, SAISource Title Perspektívne vákuové metódy a technológie (Perspective vacuum methods and technologies). - Bratislava : Slovenská vákuová spoločnosť, 2013 / Vojs M. ; Veselý M. ; Vincze A. - ISBN 978-80-971179-2-4 Pages s. 37-41 Number of pages 5 s. Publication form Print - P Action School of Vacuum Technology /16./ (Perspektívne vákuové metódy a technológie. Perspective vacuum methods and technologies) Event date 10.10.2013-13.10.2013 VEvent location Štrbské Pleso Country SK - Slovakia Event type EUR Language eng - English Country SK - Slovakia Keywords diamond films ; HEMT transistors ; GaN ; high power devices Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GBP108/12/G108 GA ČR - Czech Science Foundation (CSF) FR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO) Institutional support FZU-D - RVO:68378271 Annotation This article deals with growth of diamond thin films on GaN substrates. First, Diamond-on-GaN structures are pointed out as a promising electronic material with variety of applications. From the practical point of view, diamond thin films are shown as an attractive solution to the limited use of monocrystalline diamond substrates. For this purpose, some technological requirements on the diamond thin film growth on GaN substrates are stressed too; i.e. the topics as thermally - induced stresses, aggressive process conditions or growth of diamond films, demand on the low temperature diamond deposit ion, selective area deposition, spontaneous nucleation of diamond, diffusion of carbon atoms, etc. The experimental part of our study focuses on the direct growth of polycrystalline diamond films on AlGaN/GaN high electron mobility transistors (HEMTs) related to aforementioned technological challenges. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2014
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