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Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes
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SYSNO ASEP 0397887 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Preparation of CIGS thin films by HiPIMS or DC sputtering and various selenization processes Author(s) Olejníček, Jiří (FZU-D) RID, ORCID
Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
Kšírová, Petra (FZU-D) RID, ORCID
Kment, Štěpán (FZU-D) RID, ORCID
Brunclíková, Michaela (FZU-D) RID
Kohout, Michal (FZU-D) RID, ORCID
Čada, Martin (FZU-D) RID, ORCID, SAI
Darveau, S.A. (US)
Exstrom, C.L. (US)Source Title Journal of Advanced Oxidation Technologies - ISSN 1203-8407
Roč. 16, č. 2 (2013), s. 314-319Number of pages 6 s. Language eng - English Country CA - Canada Keywords CIGS ; HIPIMS ; selenization ; nanocrystals ; solar energy ; sputtering ; thin films Subject RIV BL - Plasma and Gas Discharge Physics R&D Projects LH12045 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000322719200014 EID SCOPUS 84881502019 Annotation CuIn1-xGaxSe2 (CIGS) thin films were prepared by the sputtering of metallic precursors Cu, In, Ga in HiPIMS or DC magnetron and subsequently selenized in an atmosphere of pure Se or Ar+Se. The average absorbed power and discharge current were the same in the HiPIMS and DC plasma. The basic aim of this work was to compare the structural properties of the CIGS films as a function of magnetron excitation mode and selenization thermal treatment conditions. Film characteristics were measured using X-ray diffraction, scanning electron microscopy, Raman spectroscopy, energy-dispersive X-ray spectroscopy and other techniques. All the CIGS films revealed the chalcopyrite crystal structure with a preferential (112) orientation. Only a very small influence of magnetron excitation mode on thin film properties was observed. On the other hand, selenization in Ar+Se atmosphere led to bigger grain size, better crystallinity and a significantly higher level of Ga substitution. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2014
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