0387416 - ÚFE 2013 RIV RO eng J - Journal Article
Šrobár, Fedor - Procházková, Olga
Negative feedback phenomena in InP-based hydrogen detectors.
Optoelectronics and Advanced Materials - Rapid Communications. Roč. 6, 11-12 (2012), s. 1089-1091. ISSN 1842-6573. E-ISSN 2065-3824
R&D Projects: GA ČR GA102/09/1037
Institutional support: RVO:67985882
Keywords : Chemical sensors * Interface phenomena * Semiconductor devices
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 0.402, year: 2012 ; AIS: 0.069, rok: 2012

Properties of hydrogen detectors on the basis of Pd/oxides/InP MOS structures are investigated, in particular the dependence between hydrogen pressure and the coverage of the M/O interface by adsorbed H atoms. Presence of a negative feedback mechanism is established in the case when enthalpy of hydrogen adsorption diminishes with coverage, as supposed by the Temkin theory. The analysis is helpful in extracting model parameter values from empirical data and promoting better understanding of the detectors
Permanent Link: http://hdl.handle.net/11104/0219915