Raman spectroscopy of isotopically labeled two-layer graphene

0384802 - ÚFCH JH 2013 RIV DE eng J - Journal Article
Kalbáč, Martin - Kong, J. - Kavan, Ladislav - Dresselhaus, M. S.
Raman spectroscopy of isotopically labeled two-layer graphene.
Physica Status Solidi B. Roč. 249, č. 12 (2012), s. 2500-2502. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA AV ČR IAA400400911; GA AV ČR IAA400400804; GA AV ČR KAN200100801; GA MŠMT ME09060; GA ČR GAP204/10/1677; GA ČR GBP208/12/G016; GA ČR(CZ) GAP208/12/1062
Institutional support: RVO:61388955
Keywords : electrochemical doping * isotope labeling * graphene
Subject RIV: CG - Electrochemistry
Impact factor: 1.489, year: 2012

A detailed understanding of graphene properties both in its neutral and doped states is an important prerequisite for applications of this new material in electronic devices. We used electrochemical doping to study the influence of charge on isotopically labeled two-layer graphene. No change of the G mode intensity was observed at electrode potentials between −1.5 and 1 V. At high positive electrode potentials (>1 V) we observed enhancement of the G mode intensity due to partial removal of interfering resonant transitions. Hence, we confirmed that in case of absence of the enhancement due to a specific orientation between the two layers the Raman spectroelectrochemistry of non-stacked two-layer graphene mimics that of one-layer graphene.
Permanent Link: http://hdl.handle.net/11104/0214324