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Mechanical and electrical properties of microcrystalline silicon thin films
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SYSNO ASEP 0375338 Document Type D - Thesis R&D Document Type The record was not marked in the RIV Title Mechanical and electrical properties of microcrystalline silicon thin films Author(s) Vetushka, Aliaksi (FZU-D) RID, ORCID Issue data Praha: Univerzita Karlova, 2010 Number of pages 86 s. Language eng - English Country CZ - Czech Republic Keywords conductive atomic force microscopy ; raman micro-spectroscopy ; microcrystalline silicon Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) MEB061012 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) Annotation One of the main aims of this work is the study of the structure and mechanical properties of the mixed phase silicon thin films of various thicknesses and structures. We introduced an original setup for the stress creation in which the silicon films were deposited on the AFM cantilevers and then bent by a micromanipulator to introduce an extrinsic stress. We demonstrated that the positions of the Raman peaks changed linearly with the applied stress both for amorphous and microcrystalline silicon and we were able to compare the same film in stressed and relaxed states. Another aim of this work was the microscopic study of the charge transport in hydrogenated microcrystalline silicon with nanometer resolution. The final part of the thesis covers the results of the conductive atomic force microscopy study. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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