InAs/GaAs QD capping in kinetically or diffusion limited growth regime

0373132 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard - Caha, O.
InAs/GaAs QD capping in kinetically or diffusion limited growth regime.
IC-MOVPE XV. Warrendale: TMS, 2010. s. 44.
[International Metal Organic Vapor Phase Epitaxy Conference /15./. 23.05.2010-28.05.2010, Hyatt Regency Lake Tahoe]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs quantum dot * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism

InAs/GaAs quantum dot (QD) properties can be significantly influenced by the growth conditions of QD capping layer. MOVPE InAs/GaAs QD structures have to be prepared and capped at temperatures near 500 ºC and at low V/III ratios. Under these conditions the decomposition efficiency of standard MOVPE precursors (arsine and TMGa) is poor, epitaxial surface is covered by methyl groups and the kinetically limited growth regime is established. Under kinetically limited growth regime the growth rate dependence on concentration of group III metalorganics in the reactor is sublinear. The characteristic surface reconstruction can be recognized by RAS spectra. When QDs are capped by strain reducing InGaAs layer, the composition and thickness of ternary layer can be considerably changed under kinetically limited growth. We will discuss how the type of growth regime can influence QD photoluminescence properties.
Permanent Link: http://hdl.handle.net/11104/0206287