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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

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    SYSNO0368040
    TitleHighly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
    Author(s) Žďánský, Karel (URE-Y)
    Source Title Nanoscale Research Letters. Roč. 6, č. 490 (2011), s. 4901-49010. - : Springer
    Document TypeČlánek v odborném periodiku
    Grant OC10021 GA MŠMT - Ministry of Education, Youth and Sports (MEYS), CZ - Czech Republic
    CEZAV0Z20670512 - URE-Y (2005-2011)
    Languageeng
    CountryUS
    Keywords semiconductor devices * nanostructures * sensors
    Permanent Linkhttp://hdl.handle.net/11104/0202511
     
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