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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
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SYSNO ASEP 0368040 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles Author(s) Žďánský, Karel (URE-Y) Number of authors 1 Source Title Nanoscale Research Letters. - : Springer - ISSN 1931-7573
Roč. 6, č. 490 (2011), s. 4901-49010Number of pages 10 s. Language eng - English Country US - United States Keywords semiconductor devices ; nanostructures ; sensors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects OC10021 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000296254000002 DOI 10.1186/1556-276X-6-490 Annotation Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2012
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