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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
- 1.0368040 - ÚFE 2012 RIV US eng J - Journal Article
Žďánský, Karel
Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles.
Nanoscale Research Letters. Roč. 6, č. 490 (2011), s. 4901-49010. ISSN 1931-7573. E-ISSN 1556-276X
R&D Projects: GA MŠMT(CZ) OC10021
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor devices * nanostructures * sensors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202511
Number of the records: 1