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Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles
- 1.0368040 - ÚFE 2012 RIV US eng J - Journal Article
Žďánský, Karel
Highly sensitive hydrogen sensor based on graphite-InP or graphite-GaN Schottky barrier with electrophoretically deposited Pd nanoparticles.
Nanoscale Research Letters. Roč. 6, č. 490 (2011), s. 4901-49010. ISSN 1931-7573. E-ISSN 1556-276X
R&D Projects: GA MŠMT(CZ) OC10021
Institutional research plan: CEZ:AV0Z20670512
Keywords : semiconductor devices * nanostructures * sensors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.726, year: 2011
Depositions of Pd nanoparticles (NPs) were performed on surfaces of semiconductor wafers of InP and GaN from isooctane colloid solutions with reverse micelles. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs. Large increase of current was observed after exposing voltage biased diodes to flow of hydrogen and nitrogen blend, representing more than two orders-of-magnitude improvement over the best results reported up to now.
Permanent Link: http://hdl.handle.net/11104/0202511
Number of the records: 1