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Mapping of dopants in silicon by injection of electrons
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SYSNO ASEP 0367280 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Mapping of dopants in silicon by injection of electrons Author(s) Hovorka, Miloš (UPT-D)
Konvalina, Ivo (UPT-D) RID, ORCID, SAI
Frank, Luděk (UPT-D) RID, SAI, ORCID
Mikulík, P. (CZ)Number of authors 4 Source Title MC 2011 - Microscopy Conference Kiel. - Kiel : DGE, 2011 - ISBN 978-3-00-033910-3 Pages im7.p198:1-2 Number of pages 2 s. Action MC 2011 - Microscopy Conference Event date 28.08.2011-02.09.2011 VEvent location Kiel Country DE - Germany Event type WRD Language eng - English Country DE - Germany Keywords dopant ; silicon ; scanning electron microscopy Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects IAA100650902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GAP108/11/2270 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2012
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