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Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study
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SYSNO ASEP 0362878 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Surface refinement and electronic properties of graphene layers grown on copper substrate: An XPS, UPS and EELS study Author(s) Siokou, A. (GR)
Ravani, F. (GR)
Karakalos, S. (GR)
Frank, Otakar (UFCH-W) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCID
Galiotis, C. (GR)Source Title Applied Surface Science. - : Elsevier - ISSN 0169-4332
Roč. 257, č. 23 (2011), s. 9785-9790Number of pages 6 s. Language eng - English Country NL - Netherlands Keywords graphene ; XPS ; EELS Subject RIV CG - Electrochemistry R&D Projects LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z40400503 - UFCH-W (2005-2011) UT WOS 000293883400016 DOI 10.1016/j.apsusc.2011.06.017 Annotation The present work focuses on the assessment of two surface treatment procedures employed under ultra high vacuum conditions in order to obtain atomically clean graphene layers without disrupting the morphology and the two dimensional character of the films. Graphene layers grown by chemical vapor deposition on polycrystalline Cu were stepwise annealed up to 750 °C or treated by mild Ar+ sputtering. The effectiveness of both methods and the changes that they induce on the surface morphology and electronic structure of the films were systematically studied by X-ray photoelectron spectroscopy, and electron energy loss spectroscopy. Ultraviolet photoelectron spectroscopy was employed for the study of the electronic properties of the as received sample and in combination with the work function measurements, indicated the hybridization of the C–π network with Cu d-orbitals. Mild Ar+ sputtering sessions were found to disrupt the sp2 network and cause amorphisation of the graphitic carbon. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2012
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