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Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds
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SYSNO ASEP 0356273 Document Type C - Proceedings Paper (int. conf.) R&D Document Type The record was not marked in the RIV Title Metal nanoparticle films deposited by electrophoresis on semiconductor III-V-N compounds Author(s) Žďánský, Karel (URE-Y)
Yatskiv, Roman (URE-Y) RID, ORCID
Zavadil, Jiří (URE-Y) RID
Kostka, František (URE-Y)
Grym, Jan (URE-Y)
Nohavica, Dušan (URE-Y)
Vaniš, Jan (URE-Y) RID
Lorinčík, Jan (URE-Y)Number of authors 8 Source Title E-MRS 2010, Spring Meeting. - Strasbourg : E-MRS Headquarters, 2010 Pages g2-g7 Number of pages 6 s. Action E-MRS Spring Meeting Event date 07.06.2010-11.06.2010 VEvent location STRASBOURG Country FR - France Event type WRD Language eng - English Country FR - France Keywords semiconductor devices ; nanostructures ; sensors Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects OC10021 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN401220801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20670512 - URE-Y (2005-2011) Annotation Study of metal nanoparticle films deposited on dilute nitride-InP layers from colloid solutions is reported. Preparation of dilute nitride-InP was endeavoured by LPE growing of InP with admixture of InN and by N implantation to InP. Colloid solutions were prepared from water solutions of metal compounds and hydrazine. Samples with deposited Pd or Ag nanoparticles were characterised by AFM, SEM, SIMS, reflection, PL and Raman spectroscopy. Samples were sensitive to hydrogen in the case of Pd nanoparticles. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2011
Number of the records: 1