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Comment on "Current routes in hydrogenated microcrystalline silicon"
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SYSNO ASEP 0355032 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve SCOPUS Title Comment on "Current routes in hydrogenated microcrystalline silicon" Author(s) Vetushka, Aliaksi (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Rezek, Bohuslav (FZU-D) RID, ORCID
Stuchlík, Jiří (FZU-D) RID, ORCID
Kočka, Jan (FZU-D) RID, ORCID, SAINumber of authors 6 Source Title Physical Review. B - ISSN 1098-0121
Roč. 81, č. 23 (2010), 237301/1-237301/4Number of pages 4 s. Language eng - English Country US - United States Keywords conductive atomic force microscopy ; oxidation ; microcrystalline silicon Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) IAA100100902 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) EID SCOPUS 77956321290 DOI 10.1103/PhysRevB.81.237301 Annotation We show that local currents observed by the conductive atomic force microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of local anodic oxidation. The tip-induced oxidation changes character of the local current maps, either in repeated scans or even in the first scan of a pristine surface. In particular, the preoxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings, previously interpreted as an evidence of the main transport route at the grain boundaries in microcrystalline silicon. We also show that stripping of the surface oxide by HF etch restores the local currents to the values corresponding to C-AFM done in ultra-high-vacuum on in situ deposited samples. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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