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Electric field induced anisotropy modification in (Ga,Mn)As: a strategy for the precessional switching of the magnetization
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SYSNO ASEP 0354292 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Electric field induced anisotropy modification in (Ga,Mn)As: a strategy for the precessional switching of the magnetization Author(s) Balestriere, P. (FR)
Devolder, T. (FR)
Wunderlich, Joerg (FZU-D) RID, ORCID
Chappert, C. (FR)Number of authors 4 Source Title Applied Physics Letters. - : AIP Publishing - ISSN 0003-6951
Roč. 96, č. 14 (2010), 142504/1-142504/3Number of pages 3 s. Language eng - English Country US - United States Keywords magnetic semiconductors ; spintronics Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000276554600048 DOI 10.1063/1.3379016 Annotation We propose a scheme for the precessional switching of the magnetization in the magnetic semiconductor (Ga,Mn)As using cubic anisotropy field reduction triggered by electric field and a small assisting magnetic field. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
Number of the records: 1