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Evaluation of defect concentration in doped SWCNT

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    SYSNO ASEP0353077
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleEvaluation of defect concentration in doped SWCNT
    Author(s) Kalbáč, Martin (UFCH-W) RID, ORCID
    Kavan, Ladislav (UFCH-W) RID, ORCID
    Source TitlePhysica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
    Roč. 247, 11-12 (2010), s. 2797-2800
    Number of pages4 s.
    Languageeng - English
    CountryDE - Germany
    Keywordsdefects ; Raman spectroscopy ; spectroelectrochemistry
    Subject RIVCG - Electrochemistry
    R&D ProjectsGC203/07/J067 GA ČR - Czech Science Foundation (CSF)
    GAP204/10/1677 GA ČR - Czech Science Foundation (CSF)
    IAA400400911 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    IAA400400804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    KAN200100801 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    ME09060 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    CEZAV0Z40400503 - UFCH-W (2005-2011)
    UT WOS000285798400039
    DOI10.1002/pssb.201000180
    AnnotationIn the present study we analyze and discus Raman spectra of doped SWCNTs. We focus on the development of the integral area of the D mode (AD), the TG mode (ATG) and the G′ mode (AG′). It is shown that area of the D band is significantly attenuated in doped carbon nanotubes samples for both semiconducting and metallic tubes. A similar dependence on the doping as in the case of the area of the D mode was found also for the area of the TG and the G′ mode. The area of the G′ mode was found to be more significantly dependent on the electrode potential than the area of the TG mode. However, this difference is only small, hence the AD/AG′ and AD/ATG ratios give only slightly different results in evaluation of the amount of defects in doped SWCNT samples.
    WorkplaceJ. Heyrovsky Institute of Physical Chemistry
    ContactMichaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196
    Year of Publishing2011
Number of the records: 1  

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