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Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001)
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SYSNO ASEP 0353074 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Local enhancement of inelastic tunnelling in epitaxial graphene on SiC(0001) Author(s) Červenka, Jiří (FZU-D) RID, ORCID
van de Ruit, K. (NL)
Flipse, C.F.J. (NL)Source Title Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 247, 10-12 (2010), s. 2992-2996Number of pages 5 s. Language eng - English Country DE - Germany Keywords graphene ; phonons ; scanning tunnelling microscopy ; silicon carbide Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000285798400083 DOI 10.1002/pssb.201000167 Annotation We have measured the elastic and inelastic tunnelling properties of epitaxial graphene on SiC(0001) using cryogenic scanning tunnelling spectroscopy. We find that the dominant inelastic channel of the out-of-plane acoustic graphene phonon at 70mV is spatially localized to particular regions of the graphene–SiC system that contain localized states. At these locations the maximum inelastic tunnelling channel reaches up to half of the total tunnelling current. The local enhancement of the inelastic tunnelling is found at the localized electron states of the graphene/SiC interface layer. Nonequilibrium Green’s function formalism theory calculations indicate that this intense inelastic channel arises from graphene phonon modes strongly coupled to narrow electron states. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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