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The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition
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SYSNO ASEP 0352722 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The structure and growth mechanism of Si nanoneedles prepared by plasma-enhanced chemical vapor deposition Author(s) Červenka, Jiří (FZU-D) RID, ORCID
Ledinský, Martin (FZU-D) RID, ORCID, SAI
Stuchlík, Jiří (FZU-D) RID, ORCID
Stuchlíková, The-Ha (FZU-D) RID, ORCID
Bakardjieva, Snejana (UACH-T) SAI, RID, ORCID
Hruška, Karel (FZU-D) RID, ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAI
Kočka, Jan (FZU-D) RID, ORCID, SAISource Title Nanotechnology. - : Institute of Physics Publishing - ISSN 0957-4484
Roč. 21, č. 41 (2010), 415604/1-415604/7Number of pages 7 s. Language eng - English Country GB - United Kingdom Keywords nanoneedles ; nanowires ; silicon ; plasma ; chemical vapor deposition ; crystal structure ; growth ; phonon ; SEM ; Raman Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC06040 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100701 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100521 - FZU-D (2005-2011) AV0Z40320502 - UACH-T (2005-2011) UT WOS 000281958600017 DOI 10.1088/0957-4484/21/41/415604 Annotation Silicon nanowires and nanoneedles show promise for many device applications in nanoelectronics and nanophotonics, but the remaining challenge is to grow them at low temperatures on low-cost materials. Here we present plasma-enhanced chemical vapor deposition of crystalline/amorphous Si nanoneedles on glass at temperatures as low as 250 °C. High resolution electron microscopy and micro-Raman spectroscopy have been used to study the crystal structure and the growth mechanism of individual Si nanoneedles. The H2 dilution of the SiH4 plasma working gas has caused the formation of extremely sharp nanoneedle tips that in some cases do not contain a catalytic particle at the end. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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