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Mapping of dopants by electron injection
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SYSNO ASEP 0350658 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Mapping of dopants by electron injection Author(s) Hovorka, Miloš (UPT-D)
Konvalina, Ivo (UPT-D) RID, ORCID, SAI
Frank, Luděk (UPT-D) RID, SAI, ORCIDNumber of authors 3 Source Title Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. - Brno : Institute of Scientific Instruments AS CR, v.v.i, 2010 / Mika F. - ISBN 978-80-254-6842-5 Pages s. 15-16 Number of pages 2 s. Action International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./ Event date 31.05.2010-04.06.2010 VEvent location Skalský dvůr Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords silicon structures ; secondary electron emission ; very low energy range ; mapping dopants Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GP102/09/P543 GA ČR - Czech Science Foundation (CSF) IAA100650803 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20650511 - UPT-D (2005-2011) UT WOS 000290773700004 Annotation Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2011
Number of the records: 1